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Bitget Stock Contracts Now Live for CXMT (ChangXin Memory Technologies)

Odaily News: According to the official announcement, Bitget's stock perpetual contracts have been listed for CXMT (ChangXin Memory Technologies). These contracts are settled in USDT and support up to 20x leverage with 7×24 trading. As of now, Bitget supports a total of 273 stock contract instruments.

Binance Futures Will List Multiple TradFi USDT Perpetual Contracts

According to the official announcement, the Binance Futures platform will sequentially launch 6 USDT perpetual contracts based on traditional finance underlying assets from August 17 to 18, 2026, as follows: • GDXUSDT (Underlying: VanEck Gold Miners ETF) — August 17, 13:30 UTC • NETUSDT (Underlying: Cloudflare Class A Common Stock) — August 17, 13:35 UTC • VSTUSDT (Underlying: Vistra Corp Common Stock) — August 17, 13:40 UTC • SHOPUSDT (Underlying: Shopify Class A Shares) — August 17, 13:45 UTC • LYTEUSDT (Underlying: Roundhill Photonics & Optical ETF) — August 17, 13:50 UTC • CXMTUSDT (Underlying: ChangXin Memory Technologies, SSE 688825) — August 18, 05:00 UTC The above contracts all support up to 20x leverage, 24/7 trading, and multi-asset mode, with funding rates settled every 8 hours, capped at ±2%.

SK Hynix Stock Still Favored by Institutions After Volatility: HBM4 and Long-Term Supply Agreements Support AI-Era Growth

According to Korean media NATE, driven by the AI investment boom, SK Hynix's stock price has recently experienced severe volatility. Against the backdrop of intensifying market volatility, SK Group released an advertisement quoting the famous words of founder Choi Jong-geon (최종건): "Despair and hope are two sides of the same coin; despair can be turned into hope like flipping a hand," and rewrote it as "Anxiety and expectation in the AI era are also two sides of the same coin; anxiety can be turned into expectation," thereby conveying confidence in the long-term development of the AI industry. Securities firms believe that short-term stock price volatility has not changed SK Hynix's fundamentals, and the market should focus on its HBM4 technology leadership advantage and the performance stability brought by Long-Term Agreements (LTA). Hyundai Motor Securities analyst Noh Geun-chang (노근창) stated that SK Hynix's DRAM and NAND bit growth rates for the third quarter are expected to reach 9.7% and 1.5% respectively; with the expansion of HBM4 sales contribution, even if the proportion of Long-Term Agreements increases, DRAM Average Selling Price (ASP) is still expected to rise 19.9% quarter-over-quarter. Regarding competition concerns brought by China's ChangXin Memory Technologies (CXMT), Noh Geun-chang believes that considering the US continues to strengthen semiconductor equipment export restrictions and Micron is expanding domestic investment in the US, the possibility of major companies like Apple adopting Chinese memory chips is relatively low.

Morgan Stanley: Memory Chip Cycle Slows But AI Demand and LTA Reshape Long-Term Value

According to TechFlow Research, Morgan Stanley's latest research report in August indicates that the Q3 DRAM contract price quarter-over-quarter increase has fallen from an expected 20% to 15%, memory module inventory has risen to 12.5 weeks, and signs of weakness have emerged in China's consumer electronics demand. However, Morgan Stanley believes this is merely a normal cyclical slowdown, not a trend reversal. The capex growth rate of the four major cloud vendors was adjusted up from 14% to 29%, and AI demand remains strong. Samsung aims to place 60% to 70% of its capacity under long-term agreements, SK Hynix has completed LTA negotiations with approximately 10 clients, and Micron's 16 agreements cover approximately $100 billion in minimum revenue. Morgan Stanley maintains an overweight rating on Samsung and SK Hynix, with target prices of 381,000 won and 2.6 million won respectively, implying 74% to 84% upside potential. Samsung's current stock price corresponds to an expected P/E ratio of about 5x for 2026, while SK Hynix is about 5.8x. Morgan Stanley believes LTAs are changing industry earnings visibility; the market has not yet assigned a premium to LTA-supported earnings. If LTAs verify downside protection, the memory valuation system may be reshaped.

NVIDIA Considers Reducing Rubin Ultra GPU Configuration to Address HBM Memory Shortage

To address HBM memory supply shortages, NVIDIA is considering reducing the specifications of the next-generation Rubin Ultra GPU. According to sources cited by The Information, NVIDIA has internally tested at least three versions of the Rubin Ultra GPU with lower HBM configurations over the past few weeks, requiring HBM capacity lower than the initially announced specifications. Possible downgrade paths include scaling down from HBM4E to HBM4, and from 12Hi HBM to 8Hi HBM. This move aims to advance product launch plans under supply constraints.

SK Hynix and SanDisk Unveil First HBF Standard Specification, Capacity Up to 512GB

Odaily News: SK Hynix and SanDisk have unveiled the first standard specification for High Bandwidth Flash (HBF), a next-generation storage technology based on NAND flash. SK Hynix presented the specification at FMS 2026, held from August 4 to 6 in Santa Clara, California, USA.HBF stacks NAND flash vertically in a manner similar to High Bandwidth Memory (HBM) to enhance capacity and data transfer speeds. The specification defines two stacked configurations—8-layer and 16-layer NAND dies—with a maximum capacity of 512GB and bandwidth offered in three tiers, supporting 0.4TB to 3.0TB per second.HBF connects to processors using the industry-standard UCIe interface, enabling compatibility with different processor types such as GPUs and CPUs. The specification has been released through the Open Compute Project (OCP), and the HBF Consortium currently includes Google and AI semiconductor company Tenstorrent.SK Hynix will also showcase its in-development 10th-generation (V10) 375-layer 4D NAND wafers and products for the first time at this event, with plans to begin mass production of high-performance, high-capacity enterprise SSDs (eSSD) utilizing this technology early next year.

ChangXin Memory plans to build a second DRAM fab in Beijing and is negotiating financing support.

According to Reuters, sources familiar with the matter revealed that CXMT is considering building a second 12-inch DRAM fab in Beijing Yizhuang and is discussing financing support with the Beijing Economic-Technological Development Area and several state-owned technology enterprises. Negotiations are currently still in the early stages, and the financing scale and structure have not yet been finalized. The proposed project may be located at the company's existing Beijing facility, but production capacity plans and total investment amount have not yet been disclosed.

Serenity: AI Data Center InP Laser Supply Gap May Exceed Memory Chips, Highlighting the Value of Optical Communication Bottlenecks

Odaily News, "White-Haired Stock God" Serenity stated that Lumentum CEO Michael Hurlston has issued a warning that the indium phosphide (InP) laser supply chain for AI data centers is facing a more severe supply gap than memory chips. Even with Lumentum's five InP wafer fabs, product shipments could still fall more than 30% short of customer demand, indicating that AI infrastructure expansion is encountering a critical bottleneck in key optical communication components.Serenity pointed out that current supply pressure is mainly concentrated in the EML (electro-absorption modulated laser) segment, but the InP laser shortage could continue to spread. He remains bullish on the "bottleneck investment" opportunities in the optical communication laser supply chain, keeping an eye on companies including Applied Optoelectronics (AAOI), Sivers Semiconductors (SIVE), Lumentum (LITE), and Coherent (COHR). As AI data center capital expenditures continue to rise, optical modules, lasers, and other infrastructure segments that were previously undervalued by the market are now undergoing repricing, and the InP laser supply bottleneck could become a key limiting factor in the expansion of AI computing power.

Alibaba Cloud PolarDB and MemTensor Jointly Launch AI Memory Solution, P99 Latency Reduced by Up to 89.2%

Alibaba Cloud PolarDB and MemTensor jointly launched a one-stop AI memory solution, featuring persistent and high-availability AI memory capabilities. The solution integrates relational retrieval, vector retrieval (PGVector), and graph retrieval (PolarAGE) capabilities within a single PolarDB-PG instance, reducing P99 latency by up to 89.2%. MemTensor positions it as the MemOS persistent memory layer, emphasizing zero downtime. This collaboration directly combines database infrastructure with AI memory management, targeting AI application scenarios requiring long context or persistent state management.

A state-owned enterprise has begun mass production of self-developed DUV lithography manufacturing equipment, with ChangXin Memory Technologies potentially among its first customers

citing sources familiar with the matter, that a company backed by Chinese state capital has commenced mass production of domestically developed DUV (Deep Ultraviolet) lithography manufacturing equipment. This marks a significant step forward for China's semiconductor industry in advancing import substitution.According to reports, the company plans to produce approximately 5 DUV lithography machines in 2026 and expand output to around 20 units in 2027. While there remains a gap compared to the production capacity of Dutch lithography giant ASML (which delivered 131 immersion DUV lithography systems last year), the breakthrough in mass-producing domestic DUV equipment signals further progress towards self-sufficiency and independent control of China's chip manufacturing supply chain.Sources stated that this batch of domestically produced DUV lithography machines is scheduled for delivery to major Chinese chip manufacturers, including Semiconductor Manufacturing International Corporation (SMIC), Hua Hong Semiconductor, and memory chip producer ChangXin Memory Technologies.Among these, ChangXin Memory Technologies, as a representative enterprise in China's DRAM industry, is expected to become a key adopter of advanced domestically produced semiconductor manufacturing equipment. If the domestic DUV equipment can achieve stable operation on the production lines of manufacturers like ChangXin, it will further reduce China's memory chip industry's reliance on critical overseas equipment.

Bybit Lists CXMTUSDT Perpetual Contract

Odaily reports, according to official sources, Bybit has listed the CXMTUSDT perpetual contract, supporting up to 10x leverage.CXMT (ChangXin Memory Technologies) is a leading enterprise in the DRAM memory chip field in mainland China and a core target in the A-share storage sector.

Converted to the standard XYZ perpetual contract, ChangXin Memory Technologies supports 10x leverage and around-the-clock trading

Odaily reports: trade.xyz posted on X platform, stating that ChangXin Memory Technologies has been converted to the standard XYZ perpetual contract, supporting 10x leverage and enabling 7×24 trading throughout the year.

Bernstein: Memory LTAs Protection Mechanism Underestimated, Storage Cycle Volatility Expected to Narrow

According to TechFlow Research, Bernstein recently released the third report in its Memory LTA series, suggesting that the market's concern that LTAs might once again become "worthless paper" may be misguided. The new generation of LTAs adopts a back-end weighted margin structure, where customer default costs increase as the contract progresses, with core protection value concentrated in the latter half of the contract, coinciding precisely with the industry's downward cycle.

Changxin Technology: Fund remittance and allotment for the strategic placement of the issuance have been completed; valid subscription ratio of offline Class A investors exceeded 87%

Changxin Memory Technologies released the announcement on the offline preliminary allocation results and online winning results for the initial public offering and listing on the STAR Market, announcing that the payment and allocation work for the strategic placement of this issuance has been completed. All investors participating in the strategic placement of this issuance have participated in the strategic placement of this issuance in accordance with their commitments. The initial strategic placement quantity for this issuance is 334,404.4304 ten thousand shares, accounting for 50.00% of the initial issuance quantity and approximately 43.48% of the total number of shares issued after the full exercise of the over-allotment option. The subscription funds committed by investors participating in the strategic placement have been fully remitted to the bank account designated by CICC within the prescribed time. After the strategic placement clawback and before the initiation of the online-offline clawback mechanism, following the activation of the over-allotment, the initial online issuance quantity is 334,900.1000 ten thousand shares, accounting for approximately 55.59% of the issuance quantity of this issuance after deducting the final strategic placement quantity after the exercise of the over-allotment option.

Micron Announces SCA Signing with Qualcomm and Seven Companies to Secure Automotive Memory Supply

According to Star Market Daily, Micron announced that it has signed Strategic Customer Agreements (SCA) with key technology suppliers supporting the automotive ecosystem, including Qualcomm, Visteon, Harman, Junlian Intelligent Driving, Denso, Astemo, and Hyundai Mobis. It is reported that these agreements are the SCAs mentioned by Micron during its fiscal year 2026 third quarter financial conference call. By enhancing the certainty of supply and pricing, the agreements will support investments in technology development, certification, and manufacturing capabilities required for future automotive platforms, helping to ensure that advanced automotive platforms have the memory and storage capabilities needed to deliver richer, safer, and smarter experiences.

Analysis: The profit potential per lottery share of ChangXin Memory Technologies (CXMT) is estimated to range between 3,000 yuan and 26,000 yuan.

According to Odaily, market analysis indicates that the issuance price for CXMT is 8.66 yuan per share. A lottery share consists of 500 shares, requiring a payment of 4,330 yuan. Under conservative, neutral, optimistic, and highly optimistic valuation scenarios, CXMT's valuation is estimated at 1 trillion, 1.5 trillion, 2.3 trillion, and 4.25 trillion yuan, respectively. Based on this estimated market capitalization range of 1-4 trillion yuan, the corresponding first-day price increase post-listing is projected to fall within a 70%-600% range. Compared to the issuance price of 8.66 yuan, the profit potential per lottery share is approximately between 3,000 yuan and 26,000 yuan.Additionally, CXMT announced that the funds raised will be fully invested in three major domestic storage substitution projects: the upgrade and renovation of the 12-inch DRAM wafer production line, technological upgrades for HBM and automotive-grade storage, and research into next-generation storage forward-looking technologies. (Source: Sina Finance)

Analysis: Changxin Technology's "winning one lot" profit potential may be between 3,000 yuan and 26,000 yuan.

According to Cailian Press, if one wins an allocation in Changxin Memory Technologies' current issuance, one lot consists of 500 shares, requiring a payment of 4,330 yuan. Under four valuation scenarios—conservative, neutral, optimistic, and super-optimistic—the corresponding valuations for Changxin Memory Technologies are 1 trillion yuan, 1.5 trillion yuan, 2.3 trillion yuan, and 4.25 trillion yuan. Based on the estimated market cap range of 1 trillion yuan to 4 trillion yuan mentioned above, the corresponding first-day gain after listing falls within the 70%-600% range. Compared to the issue price of 8.66 yuan, the profit potential per winning lot is approximately between 3,000 yuan and 26,000 yuan. In addition, Changxin Memory Technologies announced that the funds raised this time will be fully invested in three major domestic substitution projects for storage, namely the upgrade and transformation of the 12-inch DRAM wafer production line, the technology upgrade of HBM and automotive-grade storage, and the forward-looking technology R&D of next-generation storage.

US ITC Issues Section 337 Final Determination on Foreign-Made Semiconductor Devices and Their Downstream Products and Components

According to Sina Finance, the US International Trade Commission (ITC) voted to initiate a 337 investigation (Investigation No. 337-TA-1511) against Certain Dynamic Random Access Memory (DRAM) Devices, Products Containing the Same, and Components Thereof (II). It is alleged that the products exported to the US, imported into the US, and sold in the US violate Section 337 of the US Tariff Act (infringing US Registered Patent Nos. 12,646,537, 12,650,937), requesting the US ITC to issue a limited exclusion order and a cease and desist order. South Korea Samsung Electronics Co., Ltd., Suwon, Republic of Korea, US Samsung Electronics America, Inc., Plano, Texas, US Samsung Semiconductor, Inc., Plano, Texas, US Google LLC, Mountain View, California, US Super Mi

Coinbase will list DRAM and SOXL perpetual contracts today.

According to the official announcement, Coinbase will list perpetual contracts for Roundhill Memory ETF (DRAM) and Direxion Daily Semiconductor Bull 3X Shares ETF (SOXL), and the DRAM-PERP and SOXL-PERP markets will open for trading on or after July 16, 2026, 17:00 (UTC+8).

AI-Driven Memory Supply Shortage Continues, Samsung and Other Smartphone Makers Face Price Hike Pressure in H2

According to Odaily, the persistent memory supply shortage driven by AI demand continues to exert upward pricing pressure on smartphone manufacturers such as Samsung Electronics, Apple, and Xiaomi in the second half of the year. Industry sources indicate that Samsung Electronics' upcoming Galaxy Z8 series, set to be released this month, has an increased likelihood of price increases based on storage capacity. The price of the 256GB base model is expected to remain at a similar level to its predecessor, approximately 3.05 million won, while the 512GB and 1TB models may see price increases of around 120,000 won each. This pricing strategy aims to minimize the price increase for the base model while prioritizing adjustments to higher-capacity models, which are more affected by memory cost pressures.